inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1336 description collector-emitter breakdown voltage- : v (br)ceo = 100v(min) high dc current gain : h fe = 1500(min) @ i c = 5a, v ce = 4v high speed switching applications high power switching applications absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 150 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 8 v i c collector current-continuous 6 a i cm collector current-peak 10 a collector power dissipation @ t a =25 2 p c collector power dissipation @ t c =25 35 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor 2SD1336 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 2a; l= 10mh 100 v v (br)ebo emitter-base breakdown voltage i e = 200ma; i c = 0 8 v v ce( sat ) collector-emitter saturation voltage i c = 5a; i b = 12.5ma b 1.5 v v be( sat ) base-emitter saturation voltage i c = 5a; i b = 12.5ma b 2.5 v i cbo collector cutoff current v cb = 150v; i e = 0 100 a h fe dc current gain i c = 5a; v ce = 4v 1500 f t current-gain?bandwidth product i c = 0.5a; v ce = 10v; f= 1mhz 20 mhz switching times t on turn-on time 0.7 s t stg storage time 4.0 s t f fall time i c = 5a, i b1 = -i b2 = 12.5ma; v cc = 50v 1.5 s isc website www.iscsemi.cn 2
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